db151s thru db157s single phase glass passivated bridge rectifiers voltage range - 50 to 1000 volts current - 1.5 ampere case: molded plastic body terminals : plated leads solderable per mil-std-750, method 2026 polarity: polarity symbols marked on case mounting position : any weight :0.02 ounce, 0.4 grams features mechanical data dimensions in inches and (millimeters) maximum ratings and electrical characteristics -55 to +150 -55 to +150 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 db151s 1.5 notes:dbs for surface mount package. ideal for printed circuit board reliable low cost construction utilizing molded plastic technique high temperature soldering guaranteed: 250*/10 seconds / 0.375''(9.5mm) led length at 5 lbs., (2.3kg)tension small size, simple installation leads solderable per mil-std-202, method 208 high surge current capability ratings at 25* ambient temperature unless otherwise specified. single phase half-wave 60hz,resistive or inductive load, for capacitive load derate current by 20%. volts volts volts symbols units amps amps volts vrrm vrms vdc i f(av) ifsm maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t a=40* peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage drop per birdge element at 1.5a maximum dc reverse current t a=25* at rated dc blocking voltage t a=125* operating temperature range storage temperature range tj tstg ir vf a m 1.1 db152s db153s DB154S db155s db156s db157s 50 10 500 + .047(1.20) .040(1.02) .205(5.2) .195(5.0) .130(3.30) .120(3.05) .335(8.51) .320(8.13) 45 .404(10.3) .386(9.80) .255(6.5) .245(6.2) .060(1.53) .040(1.02) .013(0.33) .0088(0.22) .013(0.33) .003(0.076) dbs a m mdd catalog number c c mako semiconductor m a k o s e m i c o n d u c t o r
ratings and characteristic curves db151s thru db157s 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 150 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 1 10 100 reverse vol tage.(v) fig. 3-typical reverse characteristics per bridge element number of cycles at 60 hz fig. 2-maximum non-repetitive peak forward surge current fig. 1- maximun derating curve for output rectified current a verage forward current(a) inst antaneous reverse current( * a) cap acitance.(pf) peak for ward current.(a) percent of ra ted peak reverse voltage .(%) single phase half wave 60hz resistive or inductive load 1 100 0.01 0.1 1 100 10 1.0 .10 .01 100 10 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 1 0.1 0.01 for ward voltage,(v) fig. 4-typical forward characteristics per bridge elemnt inst antaneous reverse current.(a) ambient tempera ture, c 0.6''(1.5mm) copper pauls .51''x.51'' (13mmx13mm) 2 4 6 10 20 40 60 tj=25* single sine-wave (jedec method) fig. 3-typical junction capacitance per bridge element tj=125* tj=25* tj=25* pulse width:300*s 1% duty cycle tj=25* f=1.0mhz visg=50mv p-p mako semiconductor m a k o s e m i c o n d u c t o r
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